Publikationen, an denen er mitarbeitet ANTONIO JESUS GARCIA LOUREIRO (62)

2024

  1. A General Toolkit for Advanced Semiconductor Transistors: From Simulation to Machine Learning

    IEEE Journal of the Electron Devices Society

  2. A new path towards ultra-high efficient laser power converters: Silicon carbide-based multijunction devices

    Results in Engineering, Vol. 21

  3. Scaling Challenges of Nanosheet Field-Effect Transistors into Sub-2 nm Nodes

    IEEE Journal of the Electron Devices Society, Vol. 12, pp. 479-485

2023

  1. A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET

    Solid-State Electronics, Vol. 199

  2. A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint

    PLoS ONE, Vol. 18, Núm. 7 JULY

  3. An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs

    Solid-State Electronics, Vol. 207

  4. Figures of merit that characterize silicon gate-all-around nanowire FETs affected by line edge roughness variability

    Zenodo

  5. Figures of merit that characterize silicon gate-all-around nanowire FETs affected by line edge roughness variability

    Zenodo

  6. Improving the performance of photovoltaic laser power converters using automatic global optimization techniques

    2023 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE, LAEDC

  7. Optimization of thermionic cooling semiconductor heterostructures with deep learning techniques

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  8. Photogeneration and Performance Optimization (PhPO): A New Algorithm to Improve the Performance of Vertical Epitaxial Hetero-Structure Architecture Laser Power Converters

    IEEE Access, Vol. 11, pp. 84371-84378

2022

  1. Laser Power Converter Architectures Based on 3C-SiC with Efficiencies >80%

    Solar RRL, Vol. 6, Núm. 8

  2. Pelgrom-Based Predictive Model to Estimate Metal Grain Granularity and Line Edge Roughness in Advanced Multigate MOSFETs

    IEEE Journal of the Electron Devices Society, Vol. 10, pp. 953-959

2021

  1. Impact of metal grain granularity on three gate-all-around advanced architectures

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Simulations of statistical variability in n-Type FinFET, nanowire, and nanosheet FETs

    IEEE Electron Device Letters, Vol. 42, Núm. 10, pp. 1416-1419

2020

  1. Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

    IEEE Access, Vol. 8, pp. 53196-53202

2019

  1. A multi-method simulation toolbox to study performance and variability of nanowire FETs

    Materials, Vol. 12, Núm. 15

  2. Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs

    IEEE Access, Vol. 7, pp. 12790-12797

  3. Impact of gate edge roughness variability on FinFET and gate-all-around nanowire FET

    IEEE Electron Device Letters, Vol. 40, Núm. 4, pp. 510-513

  4. Impact of threshold voltage extraction methods on semiconductor device variability

    Solid-State Electronics, Vol. 159, pp. 165-170