Publicacións nas que colabora con GUILLERMO INDALECIO FERNANDEZ (30)

2020

  1. Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

    IEEE Access, Vol. 8, pp. 53196-53202

2019

  1. A multi-method simulation toolbox to study performance and variability of nanowire FETs

    Materials, Vol. 12, Núm. 15

  2. Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs

    IEEE Access, Vol. 7, pp. 12790-12797

  3. Impact of gate edge roughness variability on FinFET and gate-all-around nanowire FET

    IEEE Electron Device Letters, Vol. 40, Núm. 4, pp. 510-513

  4. Impact of threshold voltage extraction methods on semiconductor device variability

    Solid-State Electronics, Vol. 159, pp. 165-170

2018

  1. Analysis of Fluctuation Sensitivity Map Algorithms Applied to a 10nm GAA NW FET

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  2. FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability

    IEEE Journal of the Electron Devices Society, Vol. 6, Núm. 1, pp. 332-340

  3. FoMPy: A figure of merit extraction tool for semiconductor device simulations

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  4. Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 2, pp. 456-462

  5. MPI-Performance-Aware-Reallocation: method to optimize the mapping of processes applied to a cloud infrastructure

    Computing, Vol. 100, Núm. 2, pp. 211-226

  6. Spatial Sensitivity of Silicon GAA Nanowire FETs under Line Edge Roughness Variations

    IEEE Journal of the Electron Devices Society, Vol. 6, pp. 601-610

2017

  1. Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 4, pp. 1695-1701

  2. Metal Grain Granularity Study on a Gate-All-Around Nanowire FET

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 5263-5269

  3. Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

    Solid-State Electronics, Vol. 128, pp. 17-24

2016

  1. Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216

  2. Impact of cross-section of 10.4 nm gate length Ino.53Gao.47As FinFETs on metal grain variability

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

  4. Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

    Semiconductor Science and Technology, Vol. 31, Núm. 7

  5. Study of Metal-Gate Work-Function Variation Using Voronoi Cells: Comparison of Rayleigh and Gamma Distributions

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 6, pp. 2625-2628

2015

  1. A flexible cluster system for the management of virtual clusters in the cloud

    Proceedings - 2015 IEEE 17th International Conference on High Performance Computing and Communications, 2015 IEEE 7th International Symposium on Cyberspace Safety and Security and 2015 IEEE 12th International Conference on Embedded Software and Systems, HPCC-CSS-ICESS 2015