Publicacións nas que colabora con MANUEL ALEJO ALDEGUNDE VILLAR (33)

2018

  1. Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

    Journal of Physics Condensed Matter, Vol. 30, Núm. 14

2017

  1. Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

    Solid-State Electronics, Vol. 128, pp. 17-24

2016

  1. Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216

  2. Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

  3. Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

    Semiconductor Science and Technology, Vol. 31, Núm. 7

2015

  1. Variability characterisation of nanoscale Si and InGaAs fin field-effect-transistors at subthreshold

    Journal of Low Power Electronics, Vol. 11, Núm. 2, pp. 256-262

2014

  1. MC/DD study of metal grain induced current variability in a nanoscale InGaAs FinFET

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs finFET

    IEEE Transactions on Electron Devices, Vol. 61, Núm. 2, pp. 466-472

  3. Scaling of metal gate workfunction variability in nanometer SOI-FinFETs

    ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon

  4. Statistical study of the influence of LER and MGG in SOI MOSFET

    Semiconductor Science and Technology, Vol. 29, Núm. 4

  5. Variability characterisation of nanoscale Si and InGaAs FinFETs at subthreshold

    2014 5th European Workshop on CMOS Variability, VARI 2014

2013

  1. Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator

    International Journal of High Performance Computing Applications, Vol. 27, Núm. 4, pp. 483-492

  2. Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53 Ga 0.47 As GAA MOSFET

    IEEE Electron Device Letters, Vol. 34, Núm. 2, pp. 205-207

2012

  1. 3D 'atomistic' simulations of dopant induced variability in nanoscale implant free In 0.75Ga 0.25As MOSFETs

    Solid-State Electronics, Vol. 69, pp. 43-49

  2. 3D simulations of random dopant induced threshold voltage variability in inversion-mode In0.53Ga0.47As GAA MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Two-dimensional Monte Carlo simulation of DGSOI MOSFET misalignment

    IEEE Transactions on Electron Devices, Vol. 59, Núm. 6, pp. 1621-1628

2011

  1. Implementation of the density gradient quantum corrections for 3-d simulations of multigate nanoscaled transistors

    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, Núm. 6, pp. 841-851

  2. Parallel performance of the PETSc Krylov methods applied to linear systems of 3D nanodevice simulators

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  3. Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 8, pp. 2209-2217

  4. The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD