Publicacións en colaboración con investigadores/as de Mansoura University (23)

2024

  1. Scaling Challenges of Nanosheet Field-Effect Transistors into Sub-2 nm Nodes

    IEEE Journal of the Electron Devices Society, Vol. 12, pp. 479-485

2020

  1. Linking tree-ring growth and satellite-derived gross primary growth in multiple forest biomes. Temporal-scale matters

    Ecological Indicators, Vol. 108

2019

  1. Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs

    IEEE Access, Vol. 7, pp. 12790-12797

2018

  1. Drought sensitiveness on forest growth in peninsular Spain and the Balearic Islands

    Forests, Vol. 9, Núm. 9

  2. FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability

    IEEE Journal of the Electron Devices Society, Vol. 6, Núm. 1, pp. 332-340

  3. Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

    Journal of Physics Condensed Matter, Vol. 30, Núm. 14

2017

  1. Metal Grain Granularity Study on a Gate-All-Around Nanowire FET

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 5263-5269

  2. Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

    Solid-State Electronics, Vol. 128, pp. 17-24

  3. Study of Strained Effects in Nanoscale GAA Nanowire FETs Using 3D Monte Carlo Simulations

    2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)

  4. Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations

    European Solid-State Device Research Conference

2016

  1. 3D MC Simulations of Strain, Channel Orientation, and Quantum Confinement Effects in Nanoscale Si SOI FinFETs

    2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)

  2. 3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 933-939

  4. Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216

  5. Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

2015

  1. 3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections

    IEEE Transactions on Nanotechnology, Vol. 14, Núm. 1, pp. 93-100

  2. Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors

    18th International Workshop on Computational Electronics, IWCE 2015

  3. Multi-Subband Interface Roughness Scattering using 3D Finite Element Monte Carlo with 2D Schodinger Equation for Simulations of sub-16nm FinFETs

    2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)

  4. Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors

    18th International Workshop on Computational Electronics, IWCE 2015

  5. Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD