MANUEL ALEJO
ALDEGUNDE VILLAR
Investigador no período 1983-2023
![Foto de Karol](/img/nophoto.png)
Karol
Kalna
Publicacións nas que colabora con Karol Kalna (52)
2018
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Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness
Journal of Physics Condensed Matter, Vol. 30, Núm. 14
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Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
Solid-State Electronics, Vol. 142, pp. 31-35
2017
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Impact of phonon scattering in an Si GAA nanowire FET with a single donor in the channel
Nanoelectronic Device Applications Handbook (CRC Press), pp. 717-726
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Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
Solid-State Electronics, Vol. 128, pp. 17-24
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Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations
European Solid-State Device Research Conference
2016
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3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 933-939
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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216
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Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
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Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes
Semiconductor Science and Technology, Vol. 31, Núm. 7
2015
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3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections
IEEE Transactions on Nanotechnology, Vol. 14, Núm. 1, pp. 93-100
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Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes
Computer Physics Communications, Vol. 189, pp. 31-36
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Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts
Journal of Physics: Conference Series
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Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors
18th International Workshop on Computational Electronics, IWCE 2015
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Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model
Journal of Physics: Conference Series
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Variability characterisation of nanoscale Si and InGaAs fin field-effect-transistors at subthreshold
Journal of Low Power Electronics, Vol. 11, Núm. 2, pp. 256-262
2014
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3D Finite Element Schrödinger equation corrected Monte Carlo simulations of nanoscale FinFETs
2014 International Workshop on Computational Electronics, IWCE 2014
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3D Monte Carlo study of scaled SOI FinFETs using 2D Schrödinger quantum corrections
ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon
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MC/DD study of metal grain induced current variability in a nanoscale InGaAs FinFET
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD