Publicacións nas que colabora con A. Asenov (15)

2012

  1. NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants

    Solid-State Electronics

2011

  1. Implementation of the density gradient quantum corrections for 3-d simulations of multigate nanoscaled transistors

    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, Núm. 6, pp. 841-851

  2. Non-equilibrium Green's function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors

    Journal of Applied Physics, Vol. 110, Núm. 9

  3. Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 8, pp. 2209-2217

  4. The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2010

  1. Channel length dependence of discrete dopant effects in narrow Si nanowire transistors: A full 3D NEGF study

    2010 14th International Workshop on Computational Electronics, IWCE 2010

  2. Impact of scattering on the performance of a Si GAA nanowire FETs: From diffusive to ballistic regime

    2010 14th International Workshop on Computational Electronics, IWCE 2010

2009

  1. 3D drift-diffusion simulation with quantum-corrections of Tri-Gate MOSFETs

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Efficient 3D drift-diffusion simulations of implant free heterostructure devices

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Impact of intrinsic parameter fluctuations on the performance of In 0.75Ga0.25As implant free MOSFETs

    Semiconductor Science and Technology, Vol. 24, Núm. 5

  4. Mesh generation for the "atomistic" simulation of variability in InGaAs implant-free NanoMOSFETs

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors

    Physical Review E - Statistical, Nonlinear, and Soft Matter Physics, Vol. 77, Núm. 5

2007

  1. 'Atomistic' mesh generation for the simulation of semiconductor devices

    2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

  2. Mesh generation for "atomistic" simulation of nanometre scale MOSFETs

    2007 Spanish Conference on Electron Devices, Proceedings

2006

  1. Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator

    Journal of Computational Electronics, Vol. 5, Núm. 4, pp. 311-314