Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations

  1. Aldegunde, M.
  2. Martinez, A.
  3. Barker, J.R.
Journal:
IEEE Electron Device Letters

ISSN: 0741-3106

Year of publication: 2012

Volume: 33

Issue: 2

Pages: 194-196

Type: Article

DOI: 10.1109/LED.2011.2177634 GOOGLE SCHOLAR
Data source: Scopus