Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53 Ga 0.47 As GAA MOSFET

  1. Seoane, N.
  2. Indalecio, G.
  3. Comesana, E.
  4. Garcia-Loureiro, A.J.
  5. Aldegunde, M.
  6. Kalna, K.
Journal:
IEEE Electron Device Letters

ISSN: 0741-3106

Year of publication: 2013

Volume: 34

Issue: 2

Pages: 205-207

Type: Article

DOI: 10.1109/LED.2012.2230313 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus