MANUEL ALEJO
ALDEGUNDE VILLAR
Researcher in the period 1983-2023
University of Warwick
Coventry, Reino UnidoPublications in collaboration with researchers from University of Warwick (15)
2018
-
Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
Solid-State Electronics, Vol. 142, pp. 31-35
2017
-
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
Solid-State Electronics, Vol. 128, pp. 17-24
2016
-
3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
-
Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 933-939
-
Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216
-
Development of an exchange-correlation functional with uncertainty quantification capabilities for density functional theory
Journal of Computational Physics, Vol. 311, pp. 173-195
-
Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
Journal of Computational Electronics, Vol. 15, Núm. 4, pp. 1130-1147
-
Quantifying uncertainties in first-principles alloy thermodynamics using cluster expansions
Journal of Computational Physics, Vol. 323, pp. 17-44
-
Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
2015
-
Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes
Computer Physics Communications, Vol. 189, pp. 31-36
-
Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts
Journal of Physics: Conference Series
-
Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors
18th International Workshop on Computational Electronics, IWCE 2015
-
Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
-
The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model
Journal of Physics: Conference Series
-
Variability characterisation of nanoscale Si and InGaAs fin field-effect-transistors at subthreshold
Journal of Low Power Electronics, Vol. 11, Núm. 2, pp. 256-262