Publicaciones en las que colabora con R. Valin (15)

2016

  1. Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

    Journal of Computational Electronics, Vol. 15, Núm. 4, pp. 1130-1147

2015

  1. 3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections

    IEEE Transactions on Nanotechnology, Vol. 14, Núm. 1, pp. 93-100

  2. Study of local power dissipation in ultrascaled silicon nanowire FETs

    IEEE Electron Device Letters, Vol. 36, Núm. 1, pp. 2-4

2014

  1. Causal self-energies for NEGF modelling of quantum nanowires

    Journal of Physics: Conference Series

  2. Impact of discrete dopants on an ultra-scaled FinFET using quantum transport simulations

    European Solid-State Device Research Conference

  3. Impact of lateral doping profiles on ultra-scaled Trigate FinFETs

    2014 International Workshop on Computational Electronics, IWCE 2014

  4. Quantum transport of a nanowire field-effect transistor with complex phonon self-energy

    Journal of Applied Physics, Vol. 116, Núm. 8

2013

  1. Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator

    International Journal of High Performance Computing Applications, Vol. 27, Núm. 4, pp. 483-492

2012

  1. 3D 'atomistic' simulations of dopant induced variability in nanoscale implant free In 0.75Ga 0.25As MOSFETs

    Solid-State Electronics, Vol. 69, pp. 43-49

  2. 3D simulations of random dopant induced threshold voltage variability in inversion-mode In0.53Ga0.47As GAA MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Two-dimensional Monte Carlo simulation of DGSOI MOSFET misalignment

    IEEE Transactions on Electron Devices, Vol. 59, Núm. 6, pp. 1621-1628

2011

  1. Implementation of the density gradient quantum corrections for 3-d simulations of multigate nanoscaled transistors

    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, Núm. 6, pp. 841-851

  2. Parallel performance of the PETSc Krylov methods applied to linear systems of 3D nanodevice simulators

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

2009

  1. The MOSFET virtual organisation: Grid computing for simulation in nanoelectronics

    e-Science 2009 - 5th IEEE International Conference on e-Science

  2. Using grid infrastructures for a stationary DGSOI Monte Carlo simulation

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09