Publicacións en colaboración con investigadores/as de Universitat Politècnica de Catalunya (13)

2005

  1. 3D parallel simulation of InP/InGaAs HBT

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Modelling of new SiGeC HBTs

    2005 Spanish Conference on Electron Devices, Proceedings

  3. Modelling of new SiGeCHBTs

    2005 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS

  4. Numerical simulation of new InP/GaAsSb-DHBTs using ATLAS

    2005 Spanish Conference on Electron Devices, Proceedings

  5. Tunnel effect in DC and AC characteristics of new InGaP/GaAs HBTs

    2005 Spanish Conference on Electron Devices, Proceedings

2004

  1. A model for abrupt double heterojunction bipolar transistors

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 17, Núm. 1, pp. 29-42

  2. Electron quasi-Fermi level splitting at the base-emitter junction of HBTs and DHBTs

    Semiconductor Science and Technology, Vol. 19, Núm. 3, pp. 552-557

  3. Physics-based model for tunnel heterostructure bipolar transistors

    Semiconductor Science and Technology, Vol. 19, Núm. 11, pp. 1300-1305

2003

  1. A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 16, Núm. 1, pp. 53-66

2001

  1. Three-dimensional simulation of AlxGa1-xAs/GaAs gradual heterojunction bipolar transistor

    2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001

2000

  1. Parallel finite element method to solve the 3D Poisson equation and its application to abrupt heterojunction bipolar transistors

    International Journal for Numerical Methods in Engineering, Vol. 49, Núm. 5, pp. 639-652

1999

  1. Parallel preconditioners for solving nonsymmetric linear systems

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

1998

  1. Numerical analysis of abrupt heterojunction bipolar transistors

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 11, Núm. 4, pp. 221-229