A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint

  1. García-Loureiro, A.
  2. Seoane, N.
  3. Fernández, J.G.
  4. Comesaña, E.
  5. Pichel, J.C.
Zeitschrift:
PLoS ONE

ISSN: 1932-6203

Datum der Publikation: 2023

Ausgabe: 18

Nummer: 7 JULY

Art: Artikel

DOI: 10.1371/JOURNAL.PONE.0288964 GOOGLE SCHOLAR lock_openOpen Access editor
Datenquelle: Scopus