Channel length dependence of discrete dopant effects in narrow Si nanowire transistors: A full 3D NEGF study

  1. Martinez, A.
  2. Asenov, A.
  3. Aldegunde, M.
Proceedings:
2010 14th International Workshop on Computational Electronics, IWCE 2010

ISBN: 9781424493845

Year of publication: 2010

Pages: 81-84

Type: Conference paper

DOI: 10.1109/IWCE.2010.5677945 GOOGLE SCHOLAR

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