NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants

  1. Martinez, A.
  2. Aldegunde, M.
  3. Brown, A.R.
  4. Roy, S.
  5. Asenov, A.
Journal:
Solid-State Electronics

ISSN: 0038-1101

Year of publication: 2012

Volume: 71

Pages: 101-105

Type: Conference paper

DOI: 10.1016/J.SSE.2011.10.028 GOOGLE SCHOLAR
Data source: Scopus