Impact of gate edge roughness variability on FinFET and gate-all-around nanowire FET

  1. Espineira, G.
  2. Nagy, D.
  3. Indalecio, G.
  4. Garcia-Loureiro, A.J.
  5. Kalna, K.
  6. Seoane, N.
Journal:
IEEE Electron Device Letters

ISSN: 0741-3106

Year of publication: 2019

Volume: 40

Issue: 4

Pages: 510-513

Type: Article

DOI: 10.1109/LED.2019.2900494 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus