Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability

  1. Seoane, N.
  2. Indalecio, G.
  3. Nagy, D.
  4. Kalna, K.
  5. Garcia-Loureiro, A.J.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2018

Volume: 65

Issue: 2

Pages: 456-462

Type: Article

DOI: 10.1109/TED.2017.2785325 GOOGLE SCHOLAR
Data source: Scopus