Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

  1. Elmessary, M.A.
  2. Nagy, D.
  3. Aldegunde, M.
  4. Seoane, N.
  5. Indalecio, G.
  6. Lindberg, J.
  7. Dettmer, W.
  8. Perić, D.
  9. García-Loureiro, A.J.
  10. Kalna, K.
Journal:
Solid-State Electronics

ISSN: 0038-1101

Year of publication: 2017

Volume: 128

Pages: 17-24

Type: Article

DOI: 10.1016/J.SSE.2016.10.018 GOOGLE SCHOLAR
Data source: Scopus