Random dopant related variability in the 30 nm gate length In0.75Ga0.25As implant free MOSFET

  1. Seoane, N.
  2. García-Loureiro, A.J.
  3. Kalna, K.
  4. Asenov, A.
Journal:
Journal of Computational Electronics

ISSN: 1569-8025,  1572-8137

Year of publication: 2008

Volume: 7

Issue: 3

Pages: 159-163

Type: Article

DOI: 10.1007/S10825-008-0233-3 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus