3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements

  1. Aldegunde, M.
  2. García-Loureiro, A.J.
  3. Martinez, A.
  4. Kalna, K.
Proceedings:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Year of publication: 2008

Pages: 153-156

Type: Conference paper

DOI: 10.1109/SISPAD.2008.4648260 GOOGLE SCHOLAR
Data source: Scopus