Publicaciones en colaboración con investigadores/as de University of Glasgow (25)

2011

  1. Implementation of the density gradient quantum corrections for 3-d simulations of multigate nanoscaled transistors

    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, Núm. 6, pp. 841-851

2010

  1. Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

    Computer Physics Communications, Vol. 181, Núm. 1, pp. 24-34

2009

  1. 3D drift-diffusion simulation with quantum-corrections of Tri-Gate MOSFETs

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. 3D parallel finite element Monte Carlo simulator with quantum corrections using density gradient approach

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Efficient 3D drift-diffusion simulations of implant free heterostructure devices

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  4. Impact of intrinsic parameter fluctuations on the performance of In 0.75Ga0.25As implant free MOSFETs

    Semiconductor Science and Technology, Vol. 24, Núm. 5

  5. Mesh generation for the "atomistic" simulation of variability in InGaAs implant-free NanoMOSFETs

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. 3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors

    Physical Review E - Statistical, Nonlinear, and Soft Matter Physics, Vol. 77, Núm. 5

  3. Benchmarking of scaled InGaAs implant-free NanoMOSFETs

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 9, pp. 2297-2306

  4. Development of a 3D parallel finite element Monte Carlo simulator for nano-MOSFETs

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

  5. Random dopant related variability in the 30 nm gate length In0.75Ga0.25As implant free MOSFET

    Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 159-163

  6. Tetrahedral elements in self-consistent parallel 3D Monte Carlo simulations of MOSFETs

    Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 201-204

2007

  1. 'Atomistic' mesh generation for the simulation of semiconductor devices

    2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

  2. 'Atomistic' mesh generation for the simulation of semiconductor devices

    SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007

  3. Analysis of the impact of intrinsic parameter fluctuations in a 50 nm InP HEMT

    2007 Spanish Conference on Electron Devices, Proceedings

  4. Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator

    Solid-State Electronics, Vol. 51, Núm. 3, pp. 481-488

  5. Implementation of a quantum corrections in a 3D parallel drift-diffusion simulator

    2007 Spanish Conference on Electron Devices, Proceedings

  6. Mesh generation for "atomistic" simulation of nanometre scale MOSFETs

    2007 Spanish Conference on Electron Devices, Proceedings

2006

  1. Current variations in PHEMTS introduced by channel composition fluctuations

    Journal of Physics: Conference Series, Vol. 38, Núm. 1, pp. 212-215