2021

1. Impact of metal grain granularity on three gate-all-around advanced architectures

   International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2. Simulations of statistical variability in n-Type FinFET, nanowire, and nanosheet FETs

   IEEE Electron Device Letters, Vol. 42, Núm. 10, pp. 1416-1419