Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor
- Aldegunde, M.
- Martinez, A.
- Barker, J.R.
Revista:
Journal of Applied Physics
ISSN: 0021-8979
Ano de publicación: 2013
Volume: 113
Número: 1
Tipo: Artigo