MC/DD Study of Metal Grain Induced Current Variability in a Nanoscale InGaAs FinFET

  1. Seoane, N.
  2. Aldegunde, M.
  3. Kalna, K.
  4. Garcia-Loureiro, A. J.
Colección de libros:
2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)

ISSN: 1946-1569

ISBN: 978-1-4799-5288-5

Ano de publicación: 2014

Páxinas: 253-256

Congreso: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Tipo: Achega congreso

GOOGLE SCHOLAR
Fonte de datos: WoS