3D MC Simulations of Strain, Channel Orientation, and Quantum Confinement Effects in Nanoscale Si SOI FinFETs

  1. Elmessary, Muhammad A.
  2. Nagy, Daniel
  3. Aldegunde, Manuel
  4. Garcia-Loureiro, Antonio J.
  5. Kalna, Karol
Büchersammlung:
2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)
  1. Bar, E (coord.)
  2. Lorenz, J (coord.)
  3. Pichler, P (coord.)

ISSN: 1946-1569

ISBN: 978-1-5090-0817-9

Datum der Publikation: 2016

Seiten: 229-232

Kongress: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Art: Konferenz-Beitrag

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Fuente de los datos: WoS