Simulations of statistical variability in n-Type FinFET, nanowire, and nanosheet FETs

  1. Seoane, N.
  2. Fernandez, J.G.
  3. Kalna, K.
  4. Comesana, E.
  5. Garcia-Loureiro, A.
Journal:
IEEE Electron Device Letters

ISSN: 1558-0563,  0741-3106

Year of publication: 2021

Volume: 42

Issue: 10

Pages: 1416-1419

Type: Article

DOI: 10.1109/LED.2021.3109586 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus