Contribution to the physical modelling of single charged defects causing the random telegraph noise in junctionless FinFET

  1. Atamuratov, A.E.
  2. Khalilloev, M.M.
  3. Yusupov, A.
  4. García-Loureiro, A.J.
  5. Chedjou, J.C.
  6. Kyandoghere, K.
Journal:
Applied Sciences (Switzerland)

ISSN: 2076-3417

Year of publication: 2020

Volume: 10

Issue: 15

Type: Article

DOI: 10.3390/APP10155327 GOOGLE SCHOLAR lock_openOpen access editor
Data source: Scopus