Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

  1. Nagy, D.
  2. Aldegunde, M.
  3. Elmessary, M.A.
  4. Garcia-Loureiro, A.J.
  5. Seoane, N.
  6. Kalna, K.
Journal:
Journal of Physics Condensed Matter

ISSN: 1361-648X,  0953-8984

Year of publication: 2018

Volume: 30

Issue: 14

Type: Article

DOI: 10.1088/1361-648X/AAB10F GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus