Spatial Sensitivity of Silicon GAA Nanowire FETs under Line Edge Roughness Variations

  1. Indalecio, G.
  2. Garcia-Loureiro, A.J.
  3. Seoane, N.
  4. Kalna, K.
Journal:
IEEE Journal of the Electron Devices Society

ISSN: 2168-6734

Year of publication: 2018

Volume: 6

Pages: 601-610

Type: Article

DOI: 10.1109/JEDS.2018.2828504 GOOGLE SCHOLAR lock_openOpen access editor

Sustainable development goals

Data source: Scopus