Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors
- Martinez, A.
- Aldegunde, M.
- Seoane, N.
- Brown, A.R.
- Barker, J.R.
- Asenov, A.
ISSN: 0018-9383
Datum der Publikation: 2011
Ausgabe: 58
Nummer: 8
Seiten: 2209-2217
Art: Rezension