Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator

  1. Aldegunde, M.
  2. García-Loureiro, A.J.
  3. Kalna, K.
  4. Asenov, A.
Journal:
Journal of Computational Electronics

ISSN: 1569-8025,  1572-8137

Year of publication: 2006

Volume: 5

Issue: 4

Pages: 311-314

Type: Article

DOI: 10.1007/S10825-006-0012-Y GOOGLE SCHOLAR
Data source: Scopus