Electronic, magnetic and structural properties of systems close to a metal-insulator transitioan ab initio study

Abstract

As a general summary, we note that ab initio techniques allow to describe the physics of compounds near a metal-insulator transition, or presenting different types of conduction depends on the spin-channel. Also, electronic structure properties and their variations with pressure or doping can be controlled, and this helps us predict new phenomenology and approach to describe possible technological applications in various functional materials.