Centro singular
Centro de Investigación en Tecnoloxías Intelixentes (CITIUS)
Publicacións (12) Publicacións nas que participase algún/ha investigador/a Ver datos de investigación referenciados.
2016
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3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 933-939
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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216
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Design for maximum power transfer efficiency of thermoelectric generators using mixed mode simulations
2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016
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Impact of cross-section of 10.4 nm gate length In0.53Ga0.47As FinFETs on metal grain variability
2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)
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Impact of cross-section of 10.4 nm gate length Ino.53Gao.47As FinFETs on metal grain variability
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
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Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes
Semiconductor Science and Technology, Vol. 31, Núm. 7
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Study of Metal-Gate Work-Function Variation Using Voronoi Cells: Comparison of Rayleigh and Gamma Distributions
IEEE Transactions on Electron Devices, Vol. 63, Núm. 6, pp. 2625-2628
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Study of the thermoelectric properties of non-typical semiconductor materials with conventional CAD tools
2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016
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Two-dimensional simulation study of textured p-i-n a-Si:H solar cells with p-a-SiC:H and p-nc-Si:H window layers
Optik, Vol. 127, Núm. 20, pp. 9464-9473
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Updated insight into the use of μc-Si:H n-layers in a-Si:H solar cells
Thin Solid Films, Vol. 603, pp. 283-288