Centro de Investigación en Tecnoloxías Intelixentes (CITIUS)

2015

1. 3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections

   IEEE Transactions on Nanotechnology, Vol. 14, Núm. 1, pp. 93-100

2. Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors

   18th International Workshop on Computational Electronics, IWCE 2015

3. Evaluation of the Collection Length and Optical Path Enhancement in a-Si:H Solar Cells

   Journal of Physics: Conference Series

4. Four-transistor pinned photodiodes in standard CMOS technologies for time-of-flight sensors

   Semiconductor Science and Technology, Vol. 30, Núm. 4

5. Implementation of numerical methods for nanoscaled semiconductor device simulation using OpenCL

   Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

6. Multi-Subband Interface Roughness Scattering using 3D Finite Element Monte Carlo with 2D Schodinger Equation for Simulations of sub-16nm FinFETs

   2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)

7. Multi-junction solar cells electrical characterization by neuronal networks under different irradiance, spectrum and cell temperature

   Energy, Vol. 90, pp. 846-856

8. Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors

   18th International Workshop on Computational Electronics, IWCE 2015

9. Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs

   International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

10. Raytracing and electromagnetic 2-D simulations of the EQE of a-Si:H thin-film solar cells

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

11. Variability characterisation of nanoscale Si and InGaAs fin field-effect-transistors at subthreshold

    Journal of Low Power Electronics, Vol. 11, Núm. 2, pp. 256-262