Publicacións (16) Publicacións de ANTONIO JESUS GARCIA LOUREIRO Ver datos de investigación referenciados.

filter_list Mechanics of Materials

2014

  1. Quantum corrections based on the 2-D Schrödinger equation for 3-D finite element monte carlo simulations of nanoscaled finfets

    IEEE Transactions on Electron Devices, Vol. 61, Núm. 2, pp. 423-429

  2. Statistical study of the influence of LER and MGG in SOI MOSFET

    Semiconductor Science and Technology, Vol. 29, Núm. 4

2013

  1. Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO

    Computer Physics Communications, Vol. 184, Núm. 3, pp. 746-756

2012

  1. 3D 'atomistic' simulations of dopant induced variability in nanoscale implant free In 0.75Ga 0.25As MOSFETs

    Solid-State Electronics, Vol. 69, pp. 43-49

2011

  1. Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond

    Solid-State Electronics, Vol. 65-66, Núm. 1, pp. 88-93

2010

  1. Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

    Computer Physics Communications, Vol. 181, Núm. 1, pp. 24-34

  2. Simulation of the tunnelling transport in ferromagnetic GaAs/ZnO heterojunctions

    Journal of Physics: Conference Series

2009

  1. 3D drift-diffusion simulation with quantum-corrections of Tri-Gate MOSFETs

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Impact of intrinsic parameter fluctuations on the performance of In 0.75Ga0.25As implant free MOSFETs

    Semiconductor Science and Technology, Vol. 24, Núm. 5

  3. Numerical simulation of a ferromagnetic spin-polarised diode

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors

    Physical Review E - Statistical, Nonlinear, and Soft Matter Physics, Vol. 77, Núm. 5

  2. Benchmarking of scaled InGaAs implant-free NanoMOSFETs

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 9, pp. 2297-2306

  3. Development of a 3D parallel finite element Monte Carlo simulator for nano-MOSFETs

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

  4. Random dopant related variability in the 30 nm gate length In0.75Ga0.25As implant free MOSFET

    Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 159-163

  5. Tetrahedral elements in self-consistent parallel 3D Monte Carlo simulations of MOSFETs

    Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 201-204

2006

  1. Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator

    Journal of Computational Electronics, Vol. 5, Núm. 4, pp. 311-314