Publicacións (116) Publicacións de ANTONIO JESUS GARCIA LOUREIRO Ver datos de investigación referenciados.

filter_list Condensed Matter Physics

2024

  1. A General Toolkit for Advanced Semiconductor Transistors: From Simulation to Machine Learning

    IEEE Journal of the Electron Devices Society, Vol. 12, pp. 1057-1064

  2. A novel machine learning workflow to optimize cooling devices grounded in solid-state physics

    Scientific Reports, Vol. 14, Núm. 1

  3. Comprehensive study on the physical properties of CuO-ZnO thin films: Insights into solar cell simulation

    Optical Materials, Vol. 155

  4. First investigation into the physical characteristics of GO-Doped CuO-ZnO thin films as a secondary absorption layer in CIGS solar cells

    Materials Letters, Vol. 357

  5. Scaling Challenges of Nanosheet Field-Effect Transistors into Sub-2 nm Nodes

    IEEE Journal of the Electron Devices Society, Vol. 12, pp. 479-485

  6. Ultra Scaled Nanosheet & Nanowire FETs Performance Evaluation with 3D Monte Carlo Simulations for Future Technology

    Proceedings of the International Semiconductor Conference, CAS

  7. Wide-bandgap III-V materials for high efficiency air and underwater optical photovoltaic power transmission

    Solar Energy Materials and Solar Cells, Vol. 266

2023

  1. A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET

    Solid-State Electronics, Vol. 199

  2. A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint

    PLoS ONE, Vol. 18, Núm. 7 JULY

  3. An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs

    Solid-State Electronics, Vol. 207

  4. Optimization of thermionic cooling semiconductor heterostructures with deep learning techniques

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2022

  1. Band-gap material selection for remote high-power laser transmission

    Solar Energy Materials and Solar Cells, Vol. 235

  2. Multilevel 3-D Device Simulation Approach Applied to Deeply Scaled Nanowire Field Effect Transistors

    IEEE Transactions on Electron Devices, Vol. 69, Núm. 9, pp. 5276-5282

  3. Parallel approach of Schrödinger-based quantum corrections for ultrascaled semiconductor devices

    Journal of Computational Electronics, Vol. 21, Núm. 1, pp. 10-20

  4. Pelgrom-Based Predictive Model to Estimate Metal Grain Granularity and Line Edge Roughness in Advanced Multigate MOSFETs

    IEEE Journal of the Electron Devices Society, Vol. 10, pp. 953-959

2021

  1. Does the Threshold Voltage Extraction Method Affect Device Variability?

    IEEE Journal of the Electron Devices Society, Vol. 9, pp. 469-475

  2. Impact of metal grain granularity on three gate-all-around advanced architectures

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Methodology for the Simulation of the Variability of MOSFETs with Polycrystalline High-k Dielectrics Using CAFM Input Data

    IEEE Access, Vol. 9, pp. 90568-90576

  4. Methodology for the simulation of the variability of MOSFETs with polycrystalline high-k dielectrics using CAFM input data

    IEEE Access

  5. Simulations of statistical variability in n-Type FinFET, nanowire, and nanosheet FETs

    IEEE Electron Device Letters, Vol. 42, Núm. 10, pp. 1416-1419