Publicacións (28) Publicacións de ANTONIO JESUS GARCIA LOUREIRO Ver datos de investigación referenciados.

filter_list Computational Physics

2024

  1. A novel machine learning workflow to optimize cooling devices grounded in solid-state physics

    Scientific Reports, Vol. 14, Núm. 1

  2. Scaling Challenges of Nanosheet Field-Effect Transistors into Sub-2 nm Nodes

    IEEE Journal of the Electron Devices Society, Vol. 12, pp. 479-485

2023

  1. A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint

    PLoS ONE, Vol. 18, Núm. 7 JULY

  2. Optimization of thermionic cooling semiconductor heterostructures with deep learning techniques

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2022

  1. Multilevel 3-D Device Simulation Approach Applied to Deeply Scaled Nanowire Field Effect Transistors

    IEEE Transactions on Electron Devices, Vol. 69, Núm. 9, pp. 5276-5282

  2. Parallel approach of Schrödinger-based quantum corrections for ultrascaled semiconductor devices

    Journal of Computational Electronics, Vol. 21, Núm. 1, pp. 10-20

2021

  1. Methodology for the Simulation of the Variability of MOSFETs with Polycrystalline High-k Dielectrics Using CAFM Input Data

    IEEE Access, Vol. 9, pp. 90568-90576

  2. Methodology for the simulation of the variability of MOSFETs with polycrystalline high-k dielectrics using CAFM input data

    IEEE Access

  3. Simulations of statistical variability in n-Type FinFET, nanowire, and nanosheet FETs

    IEEE Electron Device Letters, Vol. 42, Núm. 10, pp. 1416-1419

2019

  1. Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs

    IEEE Access, Vol. 7, pp. 12790-12797

2018

  1. Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

    Journal of Physics Condensed Matter, Vol. 30, Núm. 14

2017

  1. Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

    Solid-State Electronics, Vol. 128, pp. 17-24

  2. Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations

    European Solid-State Device Research Conference

2016

  1. Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 933-939

  2. Study of the thermoelectric properties of non-typical semiconductor materials with conventional CAD tools

    2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2016

2015

  1. Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors

    18th International Workshop on Computational Electronics, IWCE 2015

  2. Implementation of numerical methods for nanoscaled semiconductor device simulation using OpenCL

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

  3. Multi-Subband Interface Roughness Scattering using 3D Finite Element Monte Carlo with 2D Schodinger Equation for Simulations of sub-16nm FinFETs

    2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)

  4. Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2014

  1. MC/DD study of metal grain induced current variability in a nanoscale InGaAs FinFET

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD