Publicacións (37) Publicacións de DANIEL NAGY

2024

  1. Scaling Challenges of Nanosheet Field-Effect Transistors into Sub-2 nm Nodes

    IEEE Journal of the Electron Devices Society, Vol. 12, pp. 479-485

2020

  1. A combined first principles and kinetic monte carlo study of polyoxometalate based molecular memory devices

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

    IEEE Access, Vol. 8, pp. 53196-53202

  3. Enhanced capabilities of the nano-electronic simulation software (NESS)

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2018

  1. FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability

    IEEE Journal of the Electron Devices Society, Vol. 6, Núm. 1, pp. 332-340

  2. FoMPy: A figure of merit extraction tool for semiconductor device simulations

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  3. Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 2, pp. 456-462

  4. Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

    Journal of Physics Condensed Matter, Vol. 30, Núm. 14

2017

  1. Metal Grain Granularity Study on a Gate-All-Around Nanowire FET

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 5263-5269

  2. Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

    Solid-State Electronics, Vol. 128, pp. 17-24

  3. Study of Strained Effects in Nanoscale GAA Nanowire FETs Using 3D Monte Carlo Simulations

    2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)