Scaling Challenges of Nanosheet Field-Effect Transistors into Sub-2 nm Nodes

  1. Alabdullah, M.G.K.
  2. Elmessary, M.A.
  3. Nagy, D.
  4. Seoane, N.
  5. Garcia-Loureiro, A.J.
  6. Kalna, K.
Journal:
IEEE Journal of the Electron Devices Society

ISSN: 2168-6734

Year of publication: 2024

Volume: 12

Pages: 479-485

Type: Article

DOI: 10.1109/JEDS.2024.3416200 GOOGLE SCHOLAR lock_openOpen access editor